The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 25, 2011

Filed:

Jun. 23, 2008
Applicants:

Christopher P. Ausschnitt, Lexington, MA (US);

Lewis A. Binns, York, GB;

Jaime D. Morillo, Beacon, NY (US);

Nigel P. Smith, Hsinchu, TW;

Inventors:

Christopher P. Ausschnitt, Lexington, MA (US);

Lewis A. Binns, York, GB;

Jaime D. Morillo, Beacon, NY (US);

Nigel P. Smith, Hsinchu, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 11/00 (2006.01); G01N 11/14 (2006.01); G03F 9/00 (2006.01); G03C 5/00 (2006.01); H01L 23/544 (2006.01); H01L 21/76 (2006.01);
U.S. Cl.
CPC ...
Abstract

A target system for determining positioning error between lithographically produced integrated circuit fields on at least one lithographic level. The target system includes a first target pattern on a lithographic field containing an integrated circuit pattern, with the first target pattern comprising a plurality of sub-patterns symmetric about a first target pattern center and at a same first distance from the first target pattern center. The target system also includes a second target pattern on a different lithographic field, with the second target pattern comprising a plurality of sub-patterns symmetric about a second target pattern center and at a same second distance from the second target pattern center. The second target pattern center is intended to be at the same location as the first target pattern center. The centers of the first and second target patterns may be determined and compared to determine positioning error between the lithographic fields.


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