The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2011
Filed:
Sep. 15, 2009
Mark Ghinovker, Migdal Ha'Emek, IL;
Michael E. Adel, Zichron Ya'akov, IL;
Jorge Poplawski, Haifa, IL;
Joel L. Seligson, Misgav, IL;
Mark Ghinovker, Migdal Ha'Emek, IL;
Michael E. Adel, Zichron Ya'akov, IL;
Jorge Poplawski, Haifa, IL;
Joel L. Seligson, Misgav, IL;
KLA-Tencor Technologies Corporation, Milpitas, CA (US);
Abstract
Disclosed are techniques and apparatus are provided for determining overlay error or pattern placement error (PPE) across the field of a scanner which is used to pattern a sample, such as a semiconductor wafer or device. This determination is performed in-line on the product wafer or device. That is, the targets on which overlay or PPE measurements are performed are provided on the product wafer or device itself. The targets are either distributed across the field by placing the targets within the active area or by distributing the targets along the streets (the strips or scribe areas) which are between the dies of a field. The resulting overlay or PPE that is obtained from targets distributed across the field may then be used in a number of ways to improve the fabrication process for producing the sample. For instance, the resulting overlay or PPE may be used to more accurately predict device performance and yield, more accurately correct a deviating photolithography scanning tool, or determine wafer lot disposition.