The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2011
Filed:
Oct. 22, 2007
Li-qun Xia, Santa Clara, CA (US);
Mihaela Balseanu, Sunnyvale, CA (US);
Victor Nguyen, Novato, CA (US);
Derek R. Witty, Fremont, CA (US);
Hichem M'saad, Santa Clara, CA (US);
Haichun Yang, Santa Clara, CA (US);
Xinliang LU, Fremont, CA (US);
Chien-teh Kao, Sunnyvale, CA (US);
Mei Chang, Saratoga, CA (US);
Li-Qun Xia, Santa Clara, CA (US);
Mihaela Balseanu, Sunnyvale, CA (US);
Victor Nguyen, Novato, CA (US);
Derek R. Witty, Fremont, CA (US);
Hichem M'Saad, Santa Clara, CA (US);
Haichun Yang, Santa Clara, CA (US);
Xinliang Lu, Fremont, CA (US);
Chien-Teh Kao, Sunnyvale, CA (US);
Mei Chang, Saratoga, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method for forming a structure includes forming at least one feature across a surface of a substrate. A nitrogen-containing dielectric layer is formed over the at least one feature. A first portion of the nitrogen-containing layer on at least one sidewall of the at least one feature is removed at a first rate and a second portion of the nitrogen-containing layer over the substrate adjacent to a bottom region of the at least one feature is removed at a second rate. The first rate is greater than the second rate. A dielectric layer is formed over the nitrogen-containing dielectric layer.