The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2011
Filed:
Jun. 07, 2009
Chien-wei Chang, Taoyuan, TW;
Ting-hao Lin, Taipei, TW;
Ya-hsiang Chen, Yun-Lin, TW;
Yu-te LU, Taoyuan, TW;
Chien-Wei Chang, Taoyuan, TW;
Ting-Hao Lin, Taipei, TW;
Ya-Hsiang Chen, Yun-Lin, TW;
Yu-Te Lu, Taoyuan, TW;
Kinsus Interconnect Technology Corp., Taoyuan, TW;
Abstract
A method for fabricating a buried capacitor structure includes: laminating a first dielectric layer having a capacitor embedded therein with a second dielectric layer to bury the capacitor therebetween; forming a first circuit pattern on a first metal layer of the first dielectric layer and a second circuit pattern on a second metal layer of the second dielectric layer; depositing a first insulating layer and a second insulating layer on the first metal layer and the second metal layer, respectively; electrically connecting a positive electrode end and a negative electrode end of the capacitor to the second metal layer by a positive through-hole and a negative through-hole, thereby manufacturing the buried capacitor structure.