The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2011
Filed:
Feb. 15, 2008
Mantu K. Hudait, Portland, OR (US);
Peter G. Tolchinsky, Beaverton, OR (US);
Jack T. Kavalieros, Portland, OR (US);
Marko Radosavljevic, Beaverton, OR (US);
Mantu K. Hudait, Portland, OR (US);
Peter G. Tolchinsky, Beaverton, OR (US);
Jack T. Kavalieros, Portland, OR (US);
Marko Radosavljevic, Beaverton, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Dislocation removal from a group III-V film grown on a semiconductor substrate is generally described. In one example, an apparatus includes a semiconductor substrate, a buffer film including a group III-V semiconductor material epitaxially coupled to the semiconductor substrate wherein the buffer film includes material melted by laser pulse irradiation and recrystallized to substantially remove dislocations or defects from the buffer film, and a first semiconductor film epitaxially grown on the buffer film wherein a lattice mismatch exists between the semiconductor substrate and the first semiconductor film.