The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2010
Filed:
Oct. 31, 2007
Tai-yung Yu, Rende Township, TW;
Yu-sheng Su, Tainan, TW;
Li-te Hsu, Shanhua Township, TW;
Jin-lin Liang, Alian Township, TW;
Pin-chia Su, Shanhua Township, TW;
Tai-Yung Yu, Rende Township, TW;
Yu-Sheng Su, Tainan, TW;
Li-Te Hsu, Shanhua Township, TW;
Jin-Lin Liang, Alian Township, TW;
Pin-Chia Su, Shanhua Township, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
By exposing a process control wafer having a porous low-k-dielectric layer thereon in an HF-based low-k dielectric etching solvent comprising a dilating additive and a passivating additive, the pores in the low-k dielectric layer are dilated some of which connect with one another to form one or more continuous channels extending through the thickness of the dielectric layer and allowing the HF-based solvent to reach down to the substrate. Then the passivating additive component of the HF-based etching solvent forms a passivation layer at the dielectric layer and the substrate interface that protects substrate from the HF-based etchant.