The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2010
Filed:
Nov. 06, 2006
Paul MA, Sunnyvale, CA (US);
Kavita Shah, Sunnyvale, CA (US);
Dien-yeh Wu, San Jose, CA (US);
Seshadri Ganguli, Sunnyvale, CA (US);
Christophe Marcadal, Santa Clara, CA (US);
Frederick C. Wu, Cupertino, CA (US);
Schubert S. Chu, San Francisco, CA (US);
Paul Ma, Sunnyvale, CA (US);
Kavita Shah, Sunnyvale, CA (US);
Dien-Yeh Wu, San Jose, CA (US);
Seshadri Ganguli, Sunnyvale, CA (US);
Christophe Marcadal, Santa Clara, CA (US);
Frederick C. Wu, Cupertino, CA (US);
Schubert S. Chu, San Francisco, CA (US);
Applied Materisals, Inc., Santa Clara, CA (US);
Abstract
Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a lid assembly for conducting a vapor deposition process within a process chamber is provided which includes an insulation cap and a plasma screen. In one example, the insulation cap has a centralized channel configured to flow a first process gas from an upper surface to an expanded channel and an outer channel configured to flow a second process gas from an upper surface to a groove which is encircling the expanded channel. In one example, the plasma screen has an upper surface containing an inner area with a plurality of holes and an outer area with a plurality of slots. The insulation cap may be positioned on top of the plasma screen to form a centralized gas region with the expanded channel and a circular gas region with the groove.