The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2010
Filed:
Sep. 30, 2008
Tadahiro Ishizaka, Watervliet, NY (US);
Shigeru Mizuno, Delmar, NY (US);
Miho Jomen, Watervliet, NY (US);
Tadahiro Ishizaka, Watervliet, NY (US);
Shigeru Mizuno, Delmar, NY (US);
Miho Jomen, Watervliet, NY (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
A method is provided for integrating cobalt nitride cap layers into manufacturing of semiconductor devices to improve electromigration and stress migration in copper (Cu) metal. One embodiment includes providing a patterned substrate containing a recessed feature formed in a low-k material and a first metallization layer at the bottom of the feature, forming a cobalt nitride cap layer on the first metallization layer, depositing a barrier layer in the recessed feature, including on the low-k dielectric material and on the first cobalt metal cap layer, and filling the recessed feature with Cu metal. Another embodiment includes providing a patterned substrate having a substantially planar surface with Cu paths and low-k dielectric regions, and selectively forming a cobalt nitride cap layer on the Cu paths relative to the low-k dielectric regions.