The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2010
Filed:
Jun. 15, 2007
Yu-lien Huang, Jhubei, TW;
Yi-chen Huang, Hsin Chu, TW;
Jim CY Huang, Bao-Shan Township, Hsin-Chu County, TW;
Weng Chang, Hsin-Chu, TW;
Hun-jan Tao, Hsin Chu, TW;
Yu-Lien Huang, Jhubei, TW;
Yi-Chen Huang, Hsin Chu, TW;
Jim Cy Huang, Bao-Shan Township, Hsin-Chu County, TW;
Weng Chang, Hsin-Chu, TW;
Hun-Jan Tao, Hsin Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Provided is a semiconductor device including a substrate. A gate formed on the substrate. The gate includes a sidewall. A spacer formed on the substrate and adjacent the sidewall of the gate. The spacer has a substantially triangular geometry. A contact etch stop layer (CESL) is formed on the first gate and the first spacer. The thickness of the CESL to the width of the first spacer is between approximately 0.625 and 16.