The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 16, 2010

Filed:

Sep. 14, 2007
Applicants:

Rieko Nishimura, Yokohama, JP;

Shuichi Tamamushi, Fujisawa, JP;

Inventors:

Rieko Nishimura, Yokohama, JP;

Shuichi Tamamushi, Fujisawa, JP;

Assignee:

NuFlare Technology, Inc., Numazu-shi, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G21K 5/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

In the charged particle beam lithography system, a pattern area to be drawn is divided into a plurality of frames, a main deflection positions a charged particle beam to a subfield within the frame, and an auxiliary deflection draws a pattern in units of the subfield. The charged particle beam lithography system includes a beam optical system including a deflector deflecting the beam, a driver driving the deflector, and a deflection control portion controlling the driver according to drawing data indicating a pattern to be drawn. The deflection control portion controls the driver according to a settling time that is determined so that an offset of an irradiation position of the charged particle beam has a certain value irrespective of any changes in deflection amount of the auxiliary deflection in the subfield.


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