The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2010
Filed:
Apr. 07, 2006
Schubert S. Chu, San Francisco, CA (US);
Frederick C. Wu, Cupertino, CA (US);
Christophe Marcadal, Santa Clara, CA (US);
Seshadri Ganguli, Sunnyvale, CA (US);
Dien-yeh Wu, San Jose, CA (US);
Kavita Shah, Sunnyvale, CA (US);
Paul MA, Sunnyvale, CA (US);
Schubert S. Chu, San Francisco, CA (US);
Frederick C. Wu, Cupertino, CA (US);
Christophe Marcadal, Santa Clara, CA (US);
Seshadri Ganguli, Sunnyvale, CA (US);
Dien-Yeh Wu, San Jose, CA (US);
Kavita Shah, Sunnyvale, CA (US);
Paul Ma, Sunnyvale, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A semiconductor processing chamber is cleaned by introducing a cleaning gas into a processing chamber, striking a plasma in a remote plasma source that is in communication with the processing chamber, measuring the impedance of the plasma, vaporizing a ruthenium containing deposit on a surface of the processing chamber to form a ruthenium containing gas mixture, and flowing the gas mixture through an analyzer and into an exhaust collection assembly. The measurement of the impedance of the plasma in combination with the ruthenium concentration provides an accurate indication of chamber cleanliness.