The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 09, 2010

Filed:

May. 27, 2008
Applicants:

Xiying Chen, San Jose, CA (US);

Bing K. Yen, Cupertino, CA (US);

Dat Nguyen, San Jose, CA (US);

Huiwen Xu, Sunnyvale, CA (US);

George Samachisa, San Jose, CA (US);

Tanmay Kumar, Pleasanton, CA (US);

Er-xuan Ping, Fremont, CA (US);

Inventors:

Xiying Chen, San Jose, CA (US);

Bing K. Yen, Cupertino, CA (US);

Dat Nguyen, San Jose, CA (US);

Huiwen Xu, Sunnyvale, CA (US);

George Samachisa, San Jose, CA (US);

Tanmay Kumar, Pleasanton, CA (US);

Er-Xuan Ping, Fremont, CA (US);

Assignee:

SanDisk 3D LLC, Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A nonvolatile memory cell includes a steering element located in series with a storage element. The storage element includes a carbon material and the memory cell includes a rewritable cell having multiple memory levels.


Find Patent Forward Citations

Chen, Xiying. (2010). Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same (U.S. Patent No. 7830698). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7830698

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…