The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2010
Filed:
Oct. 23, 2009
Joshua Tseng, Linkou Township, Taipei County, TW;
Kang-cheng Lin, Yonghe, TW;
Ji-yi Yang, Taoyuan, TW;
Kuo-tai Huang, HsinChu, TW;
Ryan Chia-jen Chen, Chiayi, TW;
Joshua Tseng, Linkou Township, Taipei County, TW;
Kang-Cheng Lin, Yonghe, TW;
Ji-Yi Yang, Taoyuan, TW;
Kuo-Tai Huang, HsinChu, TW;
Ryan Chia-Jen Chen, Chiayi, TW;
Taiwan Semconductor Manufacturing Co., Ltd, Hsinchu, TW;
Abstract
A metal gate/high-k dielectric semiconductor device provides an NMOS gate structure and a PMOS gate structure formed on a semiconductor substrate. The NMOS gate structure includes a high-k gate dielectric treated with a dopant impurity such as La and the high-k gate dielectric material of the PMOS gate structure is deficient of this dopant impurity and further includes a work function tuning layer over the high-k gate dielectric.