The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2010
Filed:
Jun. 26, 2003
Masatomo Shibata, Tokyo, JP;
Yuichi Oshima, Tokyo, JP;
Takeshi Eri, Tokyo, JP;
Akira Usui, Tokyo, JP;
Haruo Sunagawa, Tokyo, JP;
Masatomo Shibata, Tokyo, JP;
Yuichi Oshima, Tokyo, JP;
Takeshi Eri, Tokyo, JP;
Akira Usui, Tokyo, JP;
Haruo Sunagawa, Tokyo, JP;
Hitachi Cable, Ltd., Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A structure of a substrate used for growing a crystal layer of a semiconductor, particularly a group-III nitride semiconductor and its manufacturing method. The substrate comprises two porous layers on a base. The mean opening diameter of the pores of the first porous laser, the outermost layer, is smaller than the means diameter of the pores in the second porous layer nearer to the base than the first porous layer. The first and second porous layers have volume porosities of 10 to 90%. More then 50% of the pores of the first porous layer extend from the surface of the first porous layer and reach the interface between the first and second porous layers. Even by a conventional crystal growing method, an epitaxial crystal of low defect density can be easily grown on the porous substrate.