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Years Active: 2010
Title: Haruo Sunagawa: Innovator in Semiconductor Technology
Introduction
Haruo Sunagawa is a prominent inventor based in Tokyo, Japan. He is known for his significant contributions to semiconductor technology, particularly in the development of porous substrates for crystal growth.
Latest Patents
Sunagawa holds a patent for a "Porous substrate and its manufacturing method, and gan semiconductor multilayer substrate and its manufacturing method." This innovative structure is designed for growing a crystal layer of a semiconductor, specifically a group-III nitride semiconductor. The substrate consists of two porous layers on a base, with the first porous layer having a mean opening diameter of pores that is smaller than that of the second porous layer. The first and second porous layers exhibit volume porosities ranging from 10 to 90%. Notably, more than 50% of the pores in the first porous layer extend from its surface to the interface with the second porous layer. This design allows for the easy growth of an epitaxial crystal with low defect density using conventional crystal growing methods.
Career Highlights
Throughout his career, Haruo Sunagawa has worked with notable companies such as Hitachi Cable, Inc. and NEC Corporation. His experience in these organizations has contributed to his expertise in semiconductor technologies and innovations.
Collaborations
Sunagawa has collaborated with esteemed colleagues, including Masatomo Shibata and Yuichi Oshima, further enhancing his contributions to the field of semiconductor research.
Conclusion
Haruo Sunagawa's work in developing advanced porous substrates has made a significant impact on semiconductor technology. His innovative approaches continue to influence the industry and pave the way for future advancements.