The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2010
Filed:
Sep. 28, 2007
Gary X. Cao, Santa Clara, CA (US);
George Chen, Los Gatos, CA (US);
Brandon L. Ward, San Jose, CA (US);
Nancy J. Wheeler, Mountain View, CA (US);
Alan Wong, San Jose, CA (US);
Gary X. Cao, Santa Clara, CA (US);
George Chen, Los Gatos, CA (US);
Brandon L. Ward, San Jose, CA (US);
Nancy J. Wheeler, Mountain View, CA (US);
Alan Wong, San Jose, CA (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
In an embodiment of the present invention, a device includes a first etched feature located in a critical dimension scanning electron microscope (CD-SEM) characterization location, the first etched feature having an upper section, a middle section, and a lower section wherein the middle section is severely shrunk relative to a corresponding middle section of a second etched feature having similar dimensions and composition that is not located in a CD-SEM characterization location. In another embodiment of the present invention, the middle section of the first etched feature has a shrinkage carryover exceeding a threshold. In still another embodiment of the present invention, the middle section of the first etched feature exhibits a line edge roughness.