The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2010
Filed:
Apr. 24, 2009
Cheng-chi Lin, Yilan, TW;
Shin Su, Hsinchu, TW;
Chien-wen Chu, Taoyuan, TW;
Shih-chin Lien, Taipei, TW;
Chin-pen Yeh, Hsinchu, TW;
Cheng-Chi Lin, Yilan, TW;
Shin Su, Hsinchu, TW;
Chien-Wen Chu, Taoyuan, TW;
Shih-Chin Lien, Taipei, TW;
Chin-Pen Yeh, Hsinchu, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
The present invention discloses a laterally double-diffused metal oxide semiconductor transistor (LDMOS) and a method for fabricating the same. The LDMOS includes a substrate, a first well, a drain, a second well and a source. The substrate includes a first conductive dopant. The first well includes a second conductive dopant and formed in a part of the substrate, and the drain is located in the first well. The second well includes the first conductive dopant and formed in another part of the substrate, and the source located in the second well. The source includes a lightly doped region and a heavily doped region extending downwardly from a top surface of the substrate. The depth of the lightly doped region is more than the depth of the heavily doped region.