The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2010
Filed:
Nov. 25, 2008
Chuan-yi Lin, Hsin-Chu, TW;
Song-bor Lee, Zhubei, TW;
Ching-kun Huang, Chubei, TW;
Sheng-yuan Lin, Hsin-Chu, TW;
Chuan-Yi Lin, Hsin-Chu, TW;
Song-Bor Lee, Zhubei, TW;
Ching-Kun Huang, Chubei, TW;
Sheng-Yuan Lin, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of forming a semiconductor device having a through-silicon via (TSV) is provided. A semiconductor device is provided having a first dielectric layer formed thereon. One or more dielectric layers are formed over the first dielectric layer, such that each of the dielectric layers have a stacking structure, wherein the stacking structures in the one or more dielectric layers are vertically aligned. The stacking structures may be, for example, metal rings. The stacking structures are then removed to form a first recess. A second recess is formed by extending the first recess into the substrate. The second recess is filled with a conductive material to form the TSV.