The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2010
Filed:
Mar. 30, 2005
Applicants:
Hideki Fujiwara, Tokyo, JP;
Kazuhiro Ikezawa, Tokyo, JP;
Hiroaki Taguchi, Tokyo, JP;
Naofumi Iwamoto, Takarazuka, JP;
Toshinori Ishii, Osaka, JP;
Takashi Komekyu, Sanda, JP;
Inventors:
Hideki Fujiwara, Tokyo, JP;
Kazuhiro Ikezawa, Tokyo, JP;
Hiroaki Taguchi, Tokyo, JP;
Naofumi Iwamoto, Takarazuka, JP;
Toshinori Ishii, Osaka, JP;
Takashi Komekyu, Sanda, JP;
Assignees:
Sumco Corporation, Tokyo, JP;
Mitsubishi Materials Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
This silicon electrode plate for plasma etching is a silicon electrode plate for plasma etching with superior durability including silicon single crystal which, in terms of atomic ratio, contains 3 to 11 ppba of boron, and further contains a total of 0.5 to 6 ppba of either or both of phosphorus and arsenic.