The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2010
Filed:
Oct. 01, 2008
Jason B. Reppert, Central, SC (US);
Jay B. Gaillard, Yadkinville, NC (US);
Bevan C. Elliott, Greenville, SC (US);
Doyl E. Dickel, Central, SC (US);
M. Pinar Mengüc, Lexington, KY (US);
Apparao M. Rao, Anderson, SC (US);
Jason B. Reppert, Central, SC (US);
Jay B. Gaillard, Yadkinville, NC (US);
Bevan C. Elliott, Greenville, SC (US);
Doyl E. Dickel, Central, SC (US);
M. Pinar Mengüc, Lexington, KY (US);
Apparao M. Rao, Anderson, SC (US);
Clemson University Research Foundation, Anderson, SC (US);
Abstract
Disclosed are methods and devices for patterning micro- and/or nano-sized pattern elements on a substrate using field emitted electrons from an element. Disclosed methods and devices can also be utilized to form nano- and micron-sized depressions in a substrate according to a more economical process than as has been utilized in the past. Methods include single-step methods by which structures can be simultaneously created and located at desired locations on a substrate. Methods include the application of a bias voltage between a probe tip and a substrate held at a relatively close gap distance. The applied voltage can promote current flow between the probe and the substrate via field emissions. During a voltage pulse, and within predetermined energy levels and tip-to-surface gap distances, three dimensional formations can be developed on the substrate surface.