The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2010
Filed:
Dec. 07, 2007
Naoto Tsuji, Tama, JP;
Kiyohiro Matsushita, Tama, JP;
Manabu Kato, Shibata, JP;
Noboru Takamure, Tama, JP;
Naoto Tsuji, Tama, JP;
Kiyohiro Matsushita, Tama, JP;
Manabu Kato, Shibata, JP;
Noboru Takamure, Tama, JP;
ASM Japan K.K., Tokyo, JP;
Abstract
A method for determining conditions for forming a dielectric SiOCH film, includes: (i) forming a dielectric SiOCH film on a substrate under conditions; (ii) evaluating the conditions using a ratio of Si—CH3 bonding strength to Si—O bonding strength of the film as formed in step (i); (iii) if the ratio is 2.50 % or higher, confirming the conditions, and if the ratio is less than 2.50 %, changing the conditions by changing at least one of the susceptor temperature, the distance between upper and lower electrodes, the RF power, and the curing time; and (iv) repeating steps (i) to (iii) until the ratio is 2.50 % or higher.