The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2010
Filed:
Mar. 09, 2007
Andrey Ushakov, Suwon-si, KR;
Yuri Tolmachev, Suwon-si, KR;
Vladimir Volynets, Suwon-si, KR;
Won Ceak Pak, Seoul, KR;
Vasily Pashkovskiy, Yongin-si, KR;
Sung Chang Park, Seoul, KR;
Yung Hee Lee, Suwon-si, KR;
Andrey Ushakov, Suwon-si, KR;
Yuri Tolmachev, Suwon-si, KR;
Vladimir Volynets, Suwon-si, KR;
Won Ceak Pak, Seoul, KR;
Vasily Pashkovskiy, Yongin-si, KR;
Sung Chang Park, Seoul, KR;
Yung Hee Lee, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
An apparatus and method to generate plasma which can be applied to semiconductor processing. The apparatus includes a chamber having a plasma generating space defined therein, a lower electrode positioned within the chamber, an upper electrode facing the lower electrode and disposed within the chamber to constitute a first plasma generating source, a second plasma generating source positioned at a higher location than that of a lower surface of the upper electrode and disposed at an outer circumference of the upper electrode, and a power supply to supply power to the first and second plasma generating sources.