The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2010
Filed:
Dec. 08, 2006
Deenesh Padhi, Sunnyvale, CA (US);
Sohyun Park, Santa Clara, CA (US);
Ganesh Balasubramanian, Sunnyvale, CA (US);
Juan Carlos Rocha-alvarez, Sunnyvale, CA (US);
Li-qun Xia, Santa Clara, CA (US);
Derek R. Witty, Fremont, CA (US);
Hichem M'saad, Santa Clara, CA (US);
Deenesh Padhi, Sunnyvale, CA (US);
Sohyun Park, Santa Clara, CA (US);
Ganesh Balasubramanian, Sunnyvale, CA (US);
Juan Carlos Rocha-Alvarez, Sunnyvale, CA (US);
Li-Qun Xia, Santa Clara, CA (US);
Derek R. Witty, Fremont, CA (US);
Hichem M'Saad, Santa Clara, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of forming a graded dielectric layer on an underlying layer including flowing a mixture of a silicon-carbon containing gas, an oxygen containing gas and a carrier gas through a showerhead comprising a blocking plate and a faceplate to form an oxide rich portion of the graded dielectric layer, where the silicon-carbon containing gas has an initial flow rate, flowing the silicon-carbon containing gas at a first intermediate flow rate for about 0.5 seconds or longer, where the first intermediate flow rate is higher than the initial flow rate, and flowing the silicon-carbon containing gas at a fastest flow rate higher than the first intermediate flow rate to form a carbon rich portion of the graded dielectric layer.