The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2010
Filed:
Feb. 06, 2007
Arthur J. Learn, Cupertino, CA (US);
Steven R. Sherman, Newton, MA (US);
Robert Michael Geffken, Burlington, VT (US);
John J. Hautala, Beverly, MA (US);
Arthur J. Learn, Cupertino, CA (US);
Steven R. Sherman, Newton, MA (US);
Robert Michael Geffken, Burlington, VT (US);
John J. Hautala, Beverly, MA (US);
Tel Epion, Inc., Billerica, MA (US);
Abstract
Capping layer or layers on a surface of a copper interconnect wiring layer for use in interconnect structures for integrated circuits and methods and apparatus for forming improved integration interconnection structures for integrated circuits by the application of gas-cluster ion-beam processing. Reduced copper diffusion and improved electromigration lifetime result and the use of selective metal capping techniques and their attendant yield problems are avoided. Various cluster tool configurations including gas-cluster ion-beam processing modules for copper capping, cleaning, etching, and film formation steps are disclosed.