The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2010
Filed:
Jun. 10, 2003
Yasushi Akiyama, Shizuoka, JP;
Yusuke Takano, Shizuoka, JP;
Kiyohisa Takahashi, Shizuoka, JP;
Sung-eun Hong, Shizuoka, JP;
Tetsuo Okayasu, Shizuoka, JP;
Yasushi Akiyama, Shizuoka, JP;
Yusuke Takano, Shizuoka, JP;
Kiyohisa Takahashi, Shizuoka, JP;
Sung-Eun Hong, Shizuoka, JP;
Tetsuo Okayasu, Shizuoka, JP;
AZ Electronic Materials USA Corp., Somerville, NJ (US);
Abstract
The composition for preventing development-defects containing (1) an ammonium salt, a tetraalkylammonium salt or a Cto Calkanolamine salt of Cto Cperfluoroalkylcarboxylic acid, Cto Cperfluoroalkylsulfonic acid and perfluoroadipic acid, or (2) a fluorinated alkyl quaternary ammonium salt of inorganic acid, wherein said surfactant is formed at the equivalent ratio of acid to base of 1:1-1:3 is applied on a chemically amplified photoresist coating on a substrate having a diameter of 8 inches or more. The chemically amplified photoresist coating is baked before and/or after applying the composition for preventing development-defects described above. Then, the baked coating with the development-defect preventing composition coating is exposed to light, post-exposure-baked, and developed. By this process, compared with the case of not using the composition for preventing development-defects, the amount of reduction in film thickness of the photoresist subsequent to development treatment is made further bigger by 100 Å to 600 Å, and the development-defects on a substrate having a diameter of 8 inches or more is reduced as well as a resist pattern having a good cross section form can be formed without T-top form etc.