The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2010
Filed:
Jul. 17, 2007
Chia Ping Lo, Jhubei, TW;
Jerry Lai, Keelung, TW;
Chii-ming Wu, Taipei, TW;
Mei-yun Wang, Hsin-Chu, TW;
Da-wen Lin, Taiping, TW;
Chia Ping Lo, Jhubei, TW;
Jerry Lai, Keelung, TW;
Chii-Ming Wu, Taipei, TW;
Mei-Yun Wang, Hsin-Chu, TW;
Da-Wen Lin, Taiping, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A structure and a method for mitigation of the damage arising in the source/drain region of a MOSFET is presented. A substrate is provided having a gate structure comprising a gate oxide layer and a gate electrode layer, and a source and drain region into which impurity ions have been implanted. A PAI process generates an amorphous layer within the source and drain region. A metal is deposited and is reacted to create a silicide within the amorphous layer, without exacerbating existing defects. Conductivity of the source and drain region is then recovered by flash annealing the substrate.