The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2010
Filed:
Sep. 11, 2006
Raihan M. Tarafdar, San Jose, CA (US);
George D. Papasouliotis, North Andover, MA (US);
Ron Rulkens, Milpitas, CA (US);
Dennis M. Hausmann, Lake Oswego, OR (US);
Jeff Tobin, Mountain View, CA (US);
Adrianne K. Tipton, Pleasanton, CA (US);
Bunsen Nie, Fremont, CA (US);
Raihan M. Tarafdar, San Jose, CA (US);
George D. Papasouliotis, North Andover, MA (US);
Ron Rulkens, Milpitas, CA (US);
Dennis M. Hausmann, Lake Oswego, OR (US);
Jeff Tobin, Mountain View, CA (US);
Adrianne K. Tipton, Pleasanton, CA (US);
Bunsen Nie, Fremont, CA (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
A silicon dioxide-based dielectric layer is formed on a substrate surface by a sequential deposition/anneal technique. The deposited layer thickness is insufficient to prevent substantially complete penetration of annealing process agents into the layer and migration of water out of the layer. The dielectric layer is then annealed, ideally at a moderate temperature, to remove water and thereby fully densify the film. The deposition and anneal processes are then repeated until a desired dielectric film thickness is achieved.