The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2010
Filed:
Jul. 01, 2005
Richard P. Rouse, Dallas, TX (US);
Shashank S. Ekbote, Allen, TX (US);
Haowen Bu, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The present invention provides a method for manufacturing a semiconductor device, a semiconductor device, and a method for manufacturing an integrated circuit including a semiconductor device. The method for manufacturing the semiconductor device, without limitation, may include providing a gate dielectric layer () and a gate electrode layer () over a substrate (), and forming a gate sidewall spacer () along one or more sidewalls of the gate dielectric layer () and the gate electrode layer () using a plasma enhanced chemical vapor deposition process, and forming different hydrogen concentration in NMOS and PMOS sidewall spacers () using a local hydrogen treatment (LHT) method.