The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2010
Filed:
Nov. 09, 2007
Andy Wei, Dresden, DE;
Anthony Mowry, Dresden, DE;
Andreas Gehring, Dresden, DE;
Maciej Wiatr, Dresden, DE;
Andy Wei, Dresden, DE;
Anthony Mowry, Dresden, DE;
Andreas Gehring, Dresden, DE;
Maciej Wiatr, Dresden, DE;
Globalfoundries Inc., Grand Cayman, KY;
Abstract
By introducing additional strain-inducing mechanisms on the basis of stress memorization techniques, the performance of NMOS transistors may be significantly increased, thereby reducing the imbalance between PMOS transistors and NMOS transistors. By amorphizing and re-crystallizing the respective material in the presence of a mask layer at various stages of the manufacturing process, a drive current improvement of up to approximately 27% has been observed, with the potential for further performance gain.