The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2010
Filed:
Aug. 10, 2009
Mantu K. Hudait, Portland, OR (US);
Aaron A. Budrevich, Portland, OR (US);
Dmitri Loubychev, Bethlehem, PA (US);
Jack T. Kavalieros, Portland, OR (US);
Suman Datta, Beaverton, OR (US);
Joel M. Fastenau, Bethlehem, PA (US);
Amy W. K. Liu, Mountain View, CA (US);
Mantu K. Hudait, Portland, OR (US);
Aaron A. Budrevich, Portland, OR (US);
Dmitri Loubychev, Bethlehem, PA (US);
Jack T. Kavalieros, Portland, OR (US);
Suman Datta, Beaverton, OR (US);
Joel M. Fastenau, Bethlehem, PA (US);
Amy W. K. Liu, Mountain View, CA (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A device grade III-V quantum well structure and method of manufacture is described. Embodiments of the present invention enable III-V InSb quantum well device layers with defect densities below 1×10cmto be formed. In an embodiment of the present invention, a delta doped layer is disposed on a dopant segregation barrier in order to confine delta dopant within the delta doped layer and suppress delta dopant surface segregation.