The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 10, 2010

Filed:

Mar. 06, 2007
Applicants:

Douglas Van Den Broeke, Sunnyvale, CA (US);

Jang Fung Chen, Cupertino, CA (US);

Thomas Laidig, Point Richmond, CA (US);

Kurt E. Wampler, Sunnyvale, CA (US);

Stephen Duan-fu Hsu, Freemont, CA (US);

Inventors:

Douglas Van Den Broeke, Sunnyvale, CA (US);

Jang Fung Chen, Cupertino, CA (US);

Thomas Laidig, Point Richmond, CA (US);

Kurt E. Wampler, Sunnyvale, CA (US);

Stephen Duan-Fu Hsu, Freemont, CA (US);

Assignee:

ASML MaskTools B.V., AH Veldhoven, NL;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of generating a mask design having optical proximity correction features disposed therein. The methods includes the steps of obtaining a desired target pattern having features to be imaged on a substrate; determining an interference map based on the target pattern, the interference map defining areas of constructive interference and areas of destructive interference between at least one of the features to be imaged and a field area adjacent the at least one feature; and placing assist features in the mask design based on the areas of constructive interference and the areas of destructive interference.


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