The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2010
Filed:
Oct. 10, 2006
Yao Hsiang Liang, Shinchu, TW;
Wen-kung Cheng, Toufen Township, TW;
Chen-peng Fan, Sinfong Township, TW;
Ming-hsien Chen, Hsinchu, TW;
Richard Chen, Jhubei, TW;
Jung-chen Yang, ChuPei, TW;
Wen-yu Ho, Jhudong Township, TW;
Chao-keng LI, Jhubei, TW;
Yong-sin Chang, Taichung, TW;
Labo Chang, Jhubei, TW;
Yao Hsiang Liang, Shinchu, TW;
Wen-Kung Cheng, Toufen Township, TW;
Chen-Peng Fan, Sinfong Township, TW;
Ming-Hsien Chen, Hsinchu, TW;
Richard Chen, Jhubei, TW;
Jung-Chen Yang, ChuPei, TW;
Wen-Yu Ho, Jhudong Township, TW;
Chao-Keng Li, Jhubei, TW;
Yong-Sin Chang, Taichung, TW;
Labo Chang, Jhubei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A semiconductor structure includes a transistor formed over a substrate. The transistor includes a transistor gate and at least one source/drain region. The semiconductor structure includes a pre-determined region coupled to the transistor. The semiconductor structure further includes a resist protection oxide (RPO) layer formed over the pre-determined region, wherein the RPO layer has a level of nitrogen of about 0.35 atomic % or less.