The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 10, 2010

Filed:

Dec. 19, 2008
Applicants:

Kentaro Iizuka, Tokyo, JP;

Hirokazu Matsumoto, Tokyo, JP;

Ryugo Oba, Tokyo, JP;

Inventors:

Kentaro Iizuka, Tokyo, JP;

Hirokazu Matsumoto, Tokyo, JP;

Ryugo Oba, Tokyo, JP;

Assignee:

Disco Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/268 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of processing a wafer having a plurality of devices which are composed of a laminate consisting of an insulating film and a functional film on the front surface of a substrate, along streets for sectioning the plurality of devices, the method comprising a first blocking groove forming step for forming a first blocking groove for dividing the laminate in a one-side portion in the width direction of a street of the wafer held on a chuck table by moving the chuck table in a first direction in the processing-feed direction while activating a first laser beam application means; and a second blocking groove and dividing groove forming step for forming a second blocking groove which divides the laminate in the other-side portion in the width direction of the street of the wafer which has undergone the first blocking groove forming step by moving the chuck table in a second direction in the processing-feed direction while activating the first laser beam application means and at the same time, forming a dividing groove in the laminate and the substrate along an intermediate portion between the first blocking groove and the second blocking groove formed in the street of the wafer by activating second laser beam application means.


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