The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2010
Filed:
Jul. 20, 2004
Hiroji Hanawa, Sunnyvale, CA (US);
Tsutomu Tanaka, Santa Clara, CA (US);
Kenneth S. Collins, San Jose, CA (US);
Amir Al-bayati, San Jose, CA (US);
Kartik Ramaswamy, Santa Clara, CA (US);
Andrew Nguyen, San Jose, CA (US);
Hiroji Hanawa, Sunnyvale, CA (US);
Tsutomu Tanaka, Santa Clara, CA (US);
Kenneth S. Collins, San Jose, CA (US);
Amir Al-Bayati, San Jose, CA (US);
Kartik Ramaswamy, Santa Clara, CA (US);
Andrew Nguyen, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A plasma immersion ion implantation process for implanting a selected species at a desired ion implantation depth profile in a workpiece is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural elongate orifices oriented in a non-parallel direction relative to a surface plane of the ion shower grid.