The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2010
Filed:
Feb. 25, 2003
Hideaki Kikuchi, Kawasaki, JP;
Genichi Komuro, Kawasaki, JP;
Mitsuhiro Endo, Chigasaki, JP;
Naoki Hirai, Chigasaki, JP;
Hideaki Kikuchi, Kawasaki, JP;
Genichi Komuro, Kawasaki, JP;
Mitsuhiro Endo, Chigasaki, JP;
Naoki Hirai, Chigasaki, JP;
Fujitsu Semiconductor Limited, Yokohama, JP;
ULVAC, Inc., Chigasaki, JP;
Abstract
In a semiconductor device manufacturing method having the etching step of an electrode material film constituting a capacitor using ferroelectric substance or high- dielectric substance, etching of a conductive film that acts as an electrode of the capacitor formed over a semiconductor substrate is carried out in an atmosphere containing bromine, and a heating temperature of the semiconductor substrate is set in a range of 300° C. to 600° C., otherwise etching of at least the conductive film is carried out in an atmosphere to which only hydrogen bromide and oxygen are supplied from an outside.