The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2010
Filed:
Apr. 25, 2007
Andreas Gehring, Dresden, DE;
Markus Lenski, Dresden, DE;
Jan Hoentschel, Dresden, DE;
Thorsten Kammler, Ottendorf-Okrilla, DE;
Andreas Gehring, Dresden, DE;
Markus Lenski, Dresden, DE;
Jan Hoentschel, Dresden, DE;
Thorsten Kammler, Ottendorf-Okrilla, DE;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
By appropriately adapting the length direction and width directions of transistor devices with respect to the crystallographic orientation of the semiconductor material such that identical vertical and horizontal growth planes upon re-crystallizing amorphized portions are obtained, the number of corresponding stacking faults may be significantly reduced. Hence, transistor elements with extremely shallow PN junctions may be formed on the basis of pre-amorphization implantation processes while substantially avoiding any undue side effects typically obtained in conventional techniques due to stacking faults.