The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2010
Filed:
Oct. 31, 2006
Yifeng Zhou, Sunnyvale, CA (US);
Siyi LI, Fremont, CA (US);
Terry Leung, Sunnyvale, CA (US);
Michael D. Armacost, San Jose, CA (US);
Yifeng Zhou, Sunnyvale, CA (US);
Siyi Li, Fremont, CA (US);
Terry Leung, Sunnyvale, CA (US);
Michael D. Armacost, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A substrate comprising a resist layer overlying a dielectric feature, is processed in a substrate processing chamber comprising an antenna, and first and second process electrodes. A process gas comprising COis introduced into the chamber. The process gas is energized to form a plasma by applying a source voltage to the antenna, and by applying to the electrodes, a first bias voltage having a first frequency of at least about 10 MHz and a second bias voltage having a second frequency of less than about 4 MHz. The ratio of the power level of the first bias voltage to the second bias voltage is sufficient to obtain an edge facet height of the underlying dielectric feature that is at least about 10% of the height of the dielectric feature.