The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2010
Filed:
Jun. 02, 2006
Kyeong-tae Lee, San Jose, CA (US);
Jinhan Choi, San Ramon, CA (US);
BI Jang, Yongin, KR;
Shashank C. Deshmukh, San Jose, CA (US);
Meihua Shen, Fremont, CA (US);
Thorsten B. Lill, Santa Clara, CA (US);
Jae Bum Yu, Suwon, KR;
Kyeong-Tae Lee, San Jose, CA (US);
Jinhan Choi, San Ramon, CA (US);
Bi Jang, Yongin, KR;
Shashank C. Deshmukh, San Jose, CA (US);
Meihua Shen, Fremont, CA (US);
Thorsten B. Lill, Santa Clara, CA (US);
Jae Bum Yu, Suwon, KR;
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of plasma etching tungsten silicide over polysilicon particularly useful in fabricating flash memory having both a densely packed area and an open (iso) area requiring a long over etch due to microloading. Wafer biasing is decreased in the over etch. The principal etchant include NFand Cl. Argon is added to prevent undercutting at the dense/iso interface. Oxygen and nitrogen oxidize any exposed silicon to increase etch selectivity and straightens the etch profile. SiClmay be added for additional selectivity.