The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2010
Filed:
Nov. 14, 2006
Shaun B Crawford, Jericho, VT (US);
Thomas B Faure, Milton, VT (US);
Cuc K Huynh, Jericho, VT (US);
James P Levin, South Burlington, VT (US);
Shaun B Crawford, Jericho, VT (US);
Thomas B Faure, Milton, VT (US);
Cuc K Huynh, Jericho, VT (US);
James P Levin, South Burlington, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Methods for manufacturing a photomask, such as a chrome on glass photomask and a phase shift photomask are provided. A selective main chrome etch and a selective chrome overetch in the fabrication process provides a photomask having improved image quality and provides nominal image size control and image size uniformity across the photomask within current process flows and manufacturing steps. The selective etch process utilizes a main etch where the resist etch selectivity (amount of chrome removed to resist removed) is higher than in the overetch step in which the etch is more selective to removal of the resist layer relative to the chrome layer. To control the etch selectivities the composition of the etchant chemistry and/or the etchant reactor hardware settings (power, voltage, etc.) can be adjusted.