The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2010
Filed:
Sep. 29, 2006
Applicants:
Jozef Brcka, Loudonville, NY (US);
Rodney L. Robison, East Berne, NY (US);
Takashi Horiuchi, Kai, JP;
Inventors:
Jozef Brcka, Loudonville, NY (US);
Rodney L. Robison, East Berne, NY (US);
Takashi Horiuchi, Kai, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract
Calibration wafers and methods for calibrating a plasma process performed in a plasma processing apparatus, such as an ionized physical vapor deposition apparatus. The calibration wafer includes one or more selective-redeposition sources that may be used for calibrating a plasma process. The selective-redeposition sources are constructed to promote the redeposition of a controllable and/or measurable amount of material during the plasma process.