The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2010
Filed:
Jul. 16, 2007
Chuanbing Xiong, Nanchang, CN;
Fengyi Jiang, Jiang Xi, CN;
LI Wang, Jiang Xi, CN;
Yingwen Tang, Jiang Xi, CN;
Changda Zheng, Jiang Xi, CN;
Junlin Liu, Jiang Xi, CN;
Weihua Liu, Jiang Xi, CN;
Guping Wang, Jiang Xi, CN;
Chuanbing Xiong, Nanchang, CN;
Fengyi Jiang, Jiang Xi, CN;
Li Wang, Jiang Xi, CN;
Yingwen Tang, Jiang Xi, CN;
Changda Zheng, Jiang Xi, CN;
Junlin Liu, Jiang Xi, CN;
Weihua Liu, Jiang Xi, CN;
Guping Wang, Jiang Xi, CN;
Lattice Power (Jiangxi) Corporation, Nanchang, CN;
Abstract
One embodiment of the present invention provides an InGaAlN-based semiconductor light-emitting device which comprises an InGaAlN-based semiconductor multilayer structure and a carbon-based substrate which supports InGaAlN-based semiconductor multilayer structure, wherein the carbon-based substrate comprises at least one carbon-based layer. This carbon-based substrate has both high thermal conductivity and low electrical resistivity.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile