The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2010
Filed:
Oct. 29, 2007
David S. Marx, Westlake Village, CA (US);
David L. Grant, Thousand Oaks, CA (US);
Michael A. Mahoney, Chatsworth, CA (US);
Tsan Yuen Chan, San Gabriel, CA (US);
David S. Marx, Westlake Village, CA (US);
David L. Grant, Thousand Oaks, CA (US);
Michael A. Mahoney, Chatsworth, CA (US);
Tsan Yuen Chan, San Gabriel, CA (US);
Tamar Technology, Inc., Newbury Park, CA (US);
Abstract
A method and apparatus for the measurement of wafer thickness, flatness and the trench depth of any trenches etched thereon using the back surface of the wafer to accurately measure the back side of a trench, rendering the trench an effective bump, capable of being measured on the top surface and the bottom surface through a non-contact optical instrument that simultaneously measures the wavelength of the top surface and bottom surface of the wafer, converting the distance between wavelengths to a thickness measurement, using a light source that renders the material of which the wafer is composed transparent in that wavelength range, i.e., using the near infrared region for measuring the thickness and trench depth measurement of wafers made of silicon, which is opaque in the visible region and transparent in the near infrared region. Thickness and flatness, as well as localized shape, can also be measured using a calibration method that utilizes a pair of optical styli.