The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2010
Filed:
Apr. 02, 2007
Da-wen Lin, Taiping, TW;
Ying-shiou Lin, Hsin-Chu, TW;
Shyh-wei Wang, Hsin-Chu, TW;
Li-ping Huang, Taipei, TW;
Ying-keung Leung, Hsinchu, TW;
Carlos H. Diaz, Mountain View, CA (US);
Da-Wen Lin, Taiping, TW;
Ying-Shiou Lin, Hsin-Chu, TW;
Shyh-Wei Wang, Hsin-Chu, TW;
Li-Ping Huang, Taipei, TW;
Ying-Keung Leung, Hsinchu, TW;
Carlos H. Diaz, Mountain View, CA (US);
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A gated-diode semiconductor device or similar component and a method of fabricating the device. The device features a gate structure disposed on a substrate over a channel and adjacent a source and a drain. The top of the source or drain region, or both, are formed so as to be at a higher elevation, in whole or in part, than the bottom of the gate structure. This configuration may be achieved by overlaying the gate structure and substrate with a profile layer that guides a subsequent etch process to create a sloped profile. The source and drain, if both are present, may be symmetrical or asymmetrical. This configuration significantly reduces dopant encroachment and, as a consequence, reduces junction leakage.