The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2010
Filed:
Aug. 08, 2006
Applicants:
Toshifumi Nagaiwa, Dresden, DE;
Junichi Sasaki, Dresden, DE;
Stefan Sawusch, Pirna, DE;
Inventors:
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01I 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for adjusting the lateral critical dimension (i.e., length and width) of a feature formed in a layer on a substrate using a dry etching process. One or more thin intermediate sub-layers are inserted in the layer within which the feature is to be formed. Once an intermediate sub-layer is reached during the etching process, an etch process is performed to correct and/or adjust the lateral critical dimensions before etching through the intermediate sub-layer and continuing the layer etch.