The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2010
Filed:
Dec. 08, 2006
Shijian LI, San Nose, CA (US);
Kartik Ramaswamy, San Jose, CA (US);
Biagio Gallo, Palo Alto, CA (US);
Dong Hyung Lee, Gyeonggi-do, KR;
Majeed A. Foad, Sunnyvale, CA (US);
Shijian Li, San Nose, CA (US);
Kartik Ramaswamy, San Jose, CA (US);
Biagio Gallo, Palo Alto, CA (US);
Dong Hyung Lee, Gyeonggi-do, KR;
Majeed A. Foad, Sunnyvale, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods for implanting ions into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, the method for implanting ions into a substrate by a plasma immersion ion implantation process includes providing a substrate into a processing chamber, supplying a gas mixture including a reacting gas and a reducing gas into the chamber, and implanting ions from the gas mixture into the substrate. In another embodiment, the method includes providing a substrate into a processing chamber, supplying a gas mixture including reacting gas and a hydrogen containing reducing gas into the chamber, and implanting ions from the gas mixture into the substrate.