The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2010
Filed:
Feb. 22, 2005
Marcus Schumacher, Deutschland, DE;
Peter Baumann, Deutschland, DE;
Johannes Lindner, Deutschland, DE;
Timothy Mcentee, Deutschland, DE;
Marcus Schumacher, Deutschland, DE;
Peter Baumann, Deutschland, DE;
Johannes Lindner, Deutschland, DE;
Timothy McEntee, Deutschland, DE;
Aixtron, Inc., Sunnyvale, CA (US);
Abstract
The invention relates to a method for depositing at least one semiconductor layer on at least one substrate in a processing chamber (). Said semiconductor layer is composed of several components which are evaporated by non-continuously injecting a liquid starting material () or a starting material () dissolved in a liquid into a tempered evaporation chamber () with the aid of one respective injector unit () while said vapor is fed to the processing chamber by means of a carrier gas (). The inventive method is characterized in that the mass flow rate parameters, such as the preliminary injection pressure, the injection frequency, the pulse/pause ratio, and the phase relation between the pulses/pauses and the pulses/pauses of the other injector unit(s), which determine the progress of the mass flow rate of a first silicon-containing starting material and a germanium-containing second starting material () through the associated injector unit (), are individually adjusted or varied.