The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 01, 2010

Filed:

Dec. 13, 2007
Applicants:

Khalil Hosseini, Weihmichl, DE;

Alexander Koenigsberger, Regensburg, DE;

Ralf Otremba, Kaufbeuren, DE;

Joachim Mahler, Regensburg, DE;

Xaver Schloegel, Sachsenkam, DE;

Klaus Schiess, Allensbach, DE;

Inventors:

Khalil Hosseini, Weihmichl, DE;

Alexander Koenigsberger, Regensburg, DE;

Ralf Otremba, Kaufbeuren, DE;

Joachim Mahler, Regensburg, DE;

Xaver Schloegel, Sachsenkam, DE;

Klaus Schiess, Allensbach, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
Abstract

A power semiconductor component stack, using lead technology with surface-mountable external contacts, includes at least two MOSFET power semiconductor components each having a top side and an underside. The underside includes: a drain external contact area, a source external contact area and a gate external contact area. The top side includes at least one source external contact area and a gate external contact area. The gate external contact areas on the top side and the underside are electrically connected to one another. The power semiconductor component stack is a series circuit or a parallel circuit of MOSFET power semiconductor components arranged one above another in a plastic housing composition.


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