The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2010
Filed:
Dec. 27, 2006
An-hsiung Liu, Tao-Yuan Hsien, TW;
Chiang-lin Shih, Taipei Hsien, TW;
Wen-bin Wu, Tao-Yuan Hsien, TW;
Hui-min Mao, Taipei, TW;
Lin-chin Su, Taipei Hsien, TW;
Pei-ing Lee, Chang-Hua Hsien, TW;
An-Hsiung Liu, Tao-Yuan Hsien, TW;
Chiang-Lin Shih, Taipei Hsien, TW;
Wen-Bin Wu, Tao-Yuan Hsien, TW;
Hui-Min Mao, Taipei, TW;
Lin-Chin Su, Taipei Hsien, TW;
Pei-Ing Lee, Chang-Hua Hsien, TW;
Nanya Technology Corp., Kueishan, Tao-Yuan Hsien, TW;
Abstract
A small-size (w<0.5 micrometers) alignment mark in combination with a 'k1 process' is proposed, which is particularly suited for the fabrication of trench-capacitor DRAM devices which requires highly accurate AA-DT and GC-DT overlay alignment. The 'k1 process' is utilized to etch away polysilicon studded in the alignment mark trenches and to refresh the trench profile, thereby improving overlay alignment accuracy and precision.