The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2010
Filed:
Aug. 16, 2004
David Matthew Burtner, Fort Collins, CO (US);
Daniel E. Siegfried, Fort Collins, CO (US);
Richard Blacker, Farmington Hills, MI (US);
Valery Alexeyev, Moscow, RU;
John Keem, Bloomfield Hills, MI (US);
Vsevolod Zelenkov, Moscow, RU;
Mark Krivoruchko, Zelenograd, RU;
David Matthew Burtner, Fort Collins, CO (US);
Daniel E. Siegfried, Fort Collins, CO (US);
Richard Blacker, Farmington Hills, MI (US);
Valery Alexeyev, Moscow, RU;
John Keem, Bloomfield Hills, MI (US);
Vsevolod Zelenkov, Moscow, RU;
Mark Krivoruchko, Zelenograd, RU;
Veeco Instruments, Inc., Plainview, NY (US);
Abstract
Shielding associated with an ion source, such as an anode layer source, reduces the amount and/or concentration of sputtered contaminants impinging and remaining on the surface of a target substrate. While passing the ion beam through to the target substrate, shielding can reduce the total amount of sputtered contaminants impinging the substrate before, during, and/or after passage of the substrate through the envelope of the etching beam. Particularly, a shield configuration that blocks the contaminants from impinging the substrate after the substrate passes through the etching beam (i.e., outside of the envelope of the etching beam) yields a higher quality substrate with reduced substrate contamination.