The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2010
Filed:
Jul. 05, 2006
Tzu-yun Chang, Hsinchu County, TW;
Chen-hua Tsai, Hsinchu County, TW;
Po-wei Liu, Taichung, TW;
Cheng-tzung Tsai, Taipei, TW;
Tzu-Yun Chang, Hsinchu County, TW;
Chen-Hua Tsai, Hsinchu County, TW;
Po-Wei Liu, Taichung, TW;
Cheng-Tzung Tsai, Taipei, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
The invention is directed to a method for forming a metal-oxide semiconductor field effect transistor. The method comprises steps of providing a substrate having a gate structure formed thereon, wherein a plurality of isolation structures are located in the substrate adjacent to both sides of the gate structure and then forming a first spacer on the sidewall of the gate structure. A portion of the substrate between the first spacer and the isolation structures is removed to form a recession and a source/drain layer is deposited in the recession, wherein the top surface of the source/drain layer is higher than the top surfaces of the isolation structures. A second spacer is formed on the isolation structures and at the sidewall of the source/drain layer and a metal silicide layer is formed on the source/drain layer.